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Structural changes and cation site ordering in Na and K forms of aluminogermanates with the zeolite gismondine topologyTRIPATHI, Akhilesh; PARISE, John B; SUN JIN KIM et al.Chemistry of materials. 2000, Vol 12, Num 12, pp 3760-3769, issn 0897-4756Article

XAFS study on the local atomic structures of germanium in organic germanium compoundsWU, Z; WANG, Y; WANG, D et al.Journal de physique. IV. 1997, Vol 7, Num 2, pp C2.207-C2.208, issn 1155-4339, 1Conference Paper

A simple method for chemical preparation of large-area electron transparency for (Si,Ge) specimensLACAYO, G; WOLLWEBER, J; NEUMANN, W et al.Physica status solidi. A. Applied research. 1998, Vol 170, Num 2, pp R5-R6, issn 0031-8965Conference Paper

Si core level XANES of organometallic compounds containing Si-Ge bonds : Experimental and theoretical observationsXIONG, J. Z; SHAM, T. K.Journal de physique. IV. 1997, Vol 7, Num 2, pp C2.493-C2.494, issn 1155-4339, 1Conference Paper

DIE KRISTALLSTRUKTUR VON GERMANIUMDISELENID. = STRUCTURE CRISTALLINE DU DISELENIURE DE GERMANIUMDITTMAR G; SCHAFER H.1976; ACTA CRYSTALLOGR., B; DANEM.; DA. 1976; VOL. 32; NO 9; PP. 2726-2728; ABS. ANGL.; BIBL. 10 REF.Article

THE CRYSTAL STRUCTURE OF GERMANIUM DIBROMIDE.ROUSE RC; PEACOR DR; MAXIM BR et al.1977; Z. KRISTALLOGR.; DTSCH.; DA. 1977; VOL. 145; NO 3-4; PP. 161-171; ABS. ALLEM.; BIBL. 16 REF.Article

Determination of trace constituents in high purity germanium tetrachloride by spark source mass spectrometryAGGARWAL, S. K; ADAMS, F; ADRIAENSSENS, E et al.Fresenius' Zeitschrift für analytische Chemie. 1984, Vol 318, Num 6, pp 402-406, issn 0016-1152Article

Electrical conductivity of black phosphorus-germanium compoundMARUYAMA, Y; INABE, T; LIN HE et al.Bulletin of the Chemical Society of Japan. 1991, Vol 64, Num 3, pp 811-813, issn 0009-2673Article

Study of the ternary system germanium-antimony-tin : experimental phase diagramDICHI, E; WOJAKOWSKA, A; LEGENDRE, B et al.Journal of alloys and compounds. 2001, Vol 320, Num 2, pp 218-223, issn 0925-8388Article

Scanning tunneling microscopy study of cleaning procedures for SiGe(001) surfacesJONES, D. E; PELZ, J. P; XIE, Y. H et al.Surface science. 1995, Vol 341, Num 1-2, pp L1005-L1010, issn 0039-6028Article

Doped Ge-Sb-Te phase-change materials for reversible phase-change optical recordingLIN, Su-Shia.Ceramics international. 2007, Vol 33, Num 7, pp 1161-1164, issn 0272-8842, 4 p.Article

Equilibrium concentration of oxygen rich and deficient defect centers in germanosilicate glassesTANDON, Pushkar; BALAKRISHNAN, Jitendra.Journal of non-crystalline solids. 2005, Vol 351, Num 1, pp 1-13, issn 0022-3093, 13 p.Article

Plasticity and brittleness of silicon-germanium acicular crystalsKURILO, I. V; BAITSAR, R. I; VARSHAVA, S. S et al.Inorganic materials. 1996, Vol 32, Num 10, pp 1022-1024, issn 0020-1685Article

The high resolution IR spectrum of 70GeHD3 : analysis of the ν5 and ν24 bands, and determination of the J- and K-dependent ground state constantsBÜRGER, H; MORITZ, P; RAHNER, A et al.Journal of molecular structure. 1994, Vol 320, pp 1-11, issn 0022-2860Article

Valance intersubband laser with strained-sysmmetrized silicon-based Si-Ge superlatticeYANWU LU; CAN LU; SUN, Gregory et al.SPIE proceedings series. 2002, pp 378-384, isbn 0-8194-4707-2, 7 p.Conference Paper

Intersubband electroluminescence from silicon-based quantum cascade structuresDEHLINGER, G; DIEHL, L; GENNSER, U et al.Science (Washington, D.C.). 2000, Vol 290, Num 5500, pp 2277-2280, issn 0036-8075Article

Analytic scaling functions for percolative metal-insulator phase transitions fitted to AlxGe1-x dataMCLACHLAN, D. S.Physica. B, Condensed matter. 1998, Vol 254, Num 3-4, pp 249-255, issn 0921-4526Article

Structures of the quaternary iron germanium antimonides R1-x(R, Fe)6Ge4(Ge, Sb)2 (R=Ti, Cr, Mn), filled derivatives of FeGe1-xSbxMILLS, Allison M; ANDERSON, Erica J; MAR, Arthur et al.Journal of alloys and compounds. 2001, Vol 322, Num 1-2, pp 103-112, issn 0925-8388Article

Topological characterization of the Bi-Ge-Te phase diagramKOSYAKOV, V. I; SHESTAKOV, V. A; SHELIMOVA, L. E et al.Inorganic materials. 2000, Vol 36, Num 3, pp 201-210, issn 0020-1685Article

A spectroscopic study of molecular hydrogen in photoinduced transformations of oxygen-deficient centers in germanosilicate glassesZAVOROTNY, YU. S; RYBALTOVSKII, A. O; CHERNOV, P. V et al.Glass physics and chemistry. 1997, Vol 23, Num 6, pp 444-454, issn 1087-6596Article

13C nuclear magnetic resonance signals of Ge/C films deposited from tetraethylgermanium in an r.f. glow dischargeGAZICKI, M; POTRZEBOWSKI, M. J; TYCZKOWSKI, J et al.Thin solid films. 1995, Vol 258, Num 1-2, pp 10-13, issn 0040-6090Article

Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructuresSOREF, R. A; FRIEDMAN, L.Superlattices and microstructures. 1993, Vol 14, Num 2-3, pp 189-193, issn 0749-6036Article

The influence of germanium substitution on the phase stability of 3d transition metal disilicidesBOUTAREK, N; MADAR, R.Applied surface science. 1993, Vol 73, pp 209-213, issn 0169-4332Conference Paper

Photoconductivity of Ge1-xSix single crystals in the range 115-300 KBAKIROV, M. Ya; SHAKHBAZOVA, R. V.Inorganic materials. 2000, Vol 36, Num 2, pp 94-96, issn 0020-1685Article

Calculation of soft atomic potentials formed by three-center bonds in germanosilicate glassDIANOV, E. M; SOKOLOV, V. O; SULIMOV, V. B et al.Journal of non-crystalline solids. 1998, Vol 224, Num 2, pp 191-200, issn 0022-3093Article

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